NCV8440

NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection − Human Body Model 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance These are Pb−Free Devices Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation Applications Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.6 A Drain (Pins 2, 4) Gate (Pin 1) Overvoltage Protection ESD Protection Source (Pin 3) MARKING DIAGRAM DRAIN SOT−223 CASE 318E STYLE 3 1 = Gate 2 = Drain 3 = Source 4 AYW xxxxx G G 1 23 GATE SOURCE DRAIN A Y W xxxxx G = Assembly Location = Year = Work Week = V8440 or 8440A = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 October, 2018 − Rev. 8 Publication Order Number: NCV8440/D NCV8440, NCV8440A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−So...