MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor IPx60R520E6
...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
CoolMOS™E6600V
600VCoolMOS™E6Power
Transistor IPx60R520E6
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
600V CoolMOS" E6 Power
Transistor
IPP60R520E6, IPA60R520E6
1 Description
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
drain pin 2
gate pin 1
source pin 3
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.52 23.4 22 2.1 500
V ! nC A µJ A/µs
Type / Ordering Code IPA60R520E6 IPP60R520E6
Package PG-TO22...