2SB1001

2SB1001 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1367 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) * PC * Tj Tstg 2 1 Ratings –20 –16 –6 –2 –3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min –20 –16 –6 — — 100 — — — — Typ — — — — — — –0.15 –1.0 150 50 Max — — — –0.1 –0.1 320 –0.3 –1.2 — — Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –5 V, IC = 0 VCE = –2 V, I C = –0.1 A (Pulse test) VCE(sat) VBE(sat) fT Cob V V MHz pF I C = –1 A, I B = –0.1 A (Pulse test) I C = –1 A, I B = –0.1 A (Pulse test) VCE = –2 V, I C = –10 mA VCB = –1...