Transistor
2SB970
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
s Features
q q
2.8 ...
Transistor
2SB970
Silicon
PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
s Features
q q
2.8 –0.3 0.65±0.15
+0.2
+0.25 1.5 –0.05
0.65±0.15
1.9±0.2
0.95
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.95
2.9 –0.05
1
+0.2
3 0.4 –0.05
+0.1
2
1.1 –0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –15 –10 –7 –1 – 0.5 200 150 –55 ~ +150
Unit V V V A A mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol :
1R
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –10V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –0.4A, IB = –8mA IC = –0.4A, IB = –8mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –15 –10 –7 130 60 – 0.16 – 0.8 130 22
*2
min
typ...