IPB65R280E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final www.DataSheet4U.net In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 drain pin 2 Applications: Adapter source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 700 0.28 45 39 3.7 500 Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 FullPAK 65E6280 Unit V Ω nC A µJ A/µs Marking Related Links IFX CoolMOS Webpage IFX Design tools VDS @ Tj,max R DS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt Type ...