IPB60R199CP

CoolMOS® Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPB60R199CP 650 V 0.199 Ω 32 nC PG-TO263 CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type IPB60R199CP Package PG-TO263 Ordering Code SP000223256 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Symbol Conditions ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V Avalanche energy, repetitive t 2),3) AR E AR I D=6.6 A, V DD=50 V Avalanche current, repetitive t 2),3) AR I AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature dv /dt V D...