IPB60R165CP
CoolMOS® Power Transistor
Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt...
IPB60R165CP
CoolMOS® Power
Transistor
Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.165 Ω 39 nC
PG-TO263
CoolMOS CP is specially designed for: Hard switching topologies for Server and Telecom
Type IPB60R165CP
Package PG-TO263
Ordering Code SP000096439
Marking 6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=7.9 A, V DD=50 V I D=7.9 A, V DD=50 V Value 21 13 61 522 0.79 7.9 50 ±20 ±30 192 -55 ... 150 W °C A V/ns V mJ Unit A
www.DataSheet4U.net
Rev. 2.1
page 1
2009-06-05
IPB60R165CP
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 12 61 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, juncti...