IPB60R099CP

IPB60R099CP CoolMOSTM Power Transistor Features Worldwide best R ds,on in TO263 Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω nC PG-TO263 CoolMOS CP is specially designed for: Hard switching SMPS topologies for Server and Telecom Type IPB60R099CP Package PG-TO263 Ordering Code SP000088490 Marking 6R099 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 W °C A V/ns V mJ Unit A www.DataSheet4U.net Rev. 2.0 page 1 2006-06-19 IPB60R099CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. T C=25 °C Value 18 93 15 Values typ. max. Unit A Reverse diode d v /dt 4) Parameter V/ns Unit Thermal characteristics Thermal resistance, junc...