IPB017N06N3G

Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G Product Summary V DS R DS(on),max ID 60 1.7 180 V mΩ A Package Marking PG-TO263-7 017N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 180 180 720 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=100 A, R GS=25 Ω mJ V W °C T C=25 °C 250 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 284 A. See figure 3 for more detailed information See figure 13 for more detailed information www.DataSheet4U.net Rev. 2.2 page 1 2009-11-16 IPB017N06N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area 5) 0.6 62 40 K/W Electrical ch...