FUJITSU MICROELECTRONICS DATA SHEET
DS05-11463-1E
MEMORY Consumer FCRAMTM
CMOS
512M Bit (4 bank x 2M word x 64 bit)
Consumer Applications Specific Memory for SiP
MB81EDS516545
■ DESCRIPTION
The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format. MB81EDS516545 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
■ FEATURES
• 2 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V • Junction Temperature: TJ = − 10 °C to + 125 °C • 1.8 V-CMOS compatible inputs • Unidirectional READ Data Strobe per 2 byte • Unidirectional WRITE Data Strobe per 2 byte • Burst Lengt.