FUJITSU MICROELECTRONICS DATA SHEET
DS05-11464-1E
MEMORY Consumer FCRAMTM
CMOS
512M Bit (4 bank x 2M word x 64 bit)
Consumer Applications Specific Memory for SiP
MB81EDS516445
■ DESCRIPTION
The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format. MB81EDS516445 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
■ FEATURES
• 2 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V • Junction Temperature: TJ = − 10 °C to + 125 °C • 1.8 V-CMOS compatible inputs • Burst Length: 2, 4, 8, 16 • CAS latency: 2, 3, 4 • Clock Stop capability during idle periods • Auto Prec.