FUJITSU MICROELECTRONICS DATA SHEET
DS05-11456-1E
MEMORY Consumer FCRAMTM
CMOS
256M Bit (4 bank x 1M word x 64 bit)
Consumer Applications Specific Memory for SiP
MB81EDS256445
■ DESCRIPTION
The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format. MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
■ FEATURES
• 1 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V • Junction Temperature: TJ = − 10 °C to + 125 °C • 1.8 V-CMOS compatible inputs • Burst Length: 2, 4, 8, 16 • CAS latency: 2, 3, 4 • Clock Stop capability during idle periods • Auto Pre.