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MTB16P04J3

Cystech Electonics
Part Number MTB16P04J3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Jul 30, 2011
Detailed Description CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C706J3 Issued Date : 2009.04.23 Revised D...
Datasheet PDF File MTB16P04J3 PDF File

MTB16P04J3
MTB16P04J3

Overview
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET Spec.
No.
: C706J3 Issued Date : 2009.
04.
23 Revised Date : Page No.
: 1/7 MTB16P04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total P...


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