2SA970

2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz High DC current gain: hFE = 200~700 High breakdown voltage: VCEO = −120 V Low pulse noise. Low 1/f noise Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −120 −120 −5 −100 −20 300 125 −55~125 V V V mA mA mW °C °C JEDEC JEITA TO-92 SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off c...