SUM60N02-3M9P

SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (Ω) 0.0039 at VGS = 10 V 0.0052 at VGS = 4.5 V ID (A)a 60 60 FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS OR-ing D TO-263 G DRAIN connected to TAB G D S S N-Channel MOSFET Top View Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cd TC = 25 °C TC = 100 °C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 20 ± 20 60a 60a 120 50 125 120 c Unit V A mJ W °C 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). d Symbol RthJA RthJC Limit 40 1.25 Unit °C/W Document Number: 69820 www.DataSheet4U.net S-80183-Rev. A, 04-Feb-08 www.vishay.com 1 SUM60N02-3m9P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain ...