Document
2SK3565
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3565
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
900
V
900
V
±30
V
5
A 15
45
W
595
mJ
5
A
4.5
mJ
150
°C
-55~150
°C
1: Gate 2: Drain 3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
2.78
°C/W
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
1
Note 2: VDD = 90 V, Tch = 25°C(Initial), L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
Start of commercial production
2002-06
1
2013-11-01
2SK3565
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS IG =±10 μA, VDS = 0 V
±30 ⎯
⎯
V
IDSS
VDS = 720 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
900 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 3 A
⎯
2.0 2.5
Ω
⎪Yfs⎪
VDS = 20 V, ID = 3 A
2.0 4.5
⎯
S
Ciss
⎯ 1150 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
20
⎯
pF
Coss
⎯ 100 ⎯
tr
10 V VGS
ID = 3 A VOUT
⎯
30
⎯
0V
ton
50 Ω
RL =
⎯
70
⎯
66.7 Ω
ns
tf
⎯
60
⎯
VDD ∼− 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯ 170 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
⎯
28
⎯
⎯
17
⎯
nC
⎯
11
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR IDRP VDSF
trr Qrr
Test Condition
⎯ ⎯ IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
5
A
⎯
⎯
15
A
⎯
⎯
−1.7
V
⎯
900
⎯
ns
⎯
5.4
⎯
μC
Marking
K3565
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product.
Lot No.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
Note 4
certain hazardous substances in electrical and electronic equipment.
2
2013-11-01
DRAIN CURRENT ID (A)
5 COMMON
SOURCE
Tc = 25°C 4 PULSE TEST
ID – VDS
8 6
10
5.5 5.25
3 5
2 4.75
1 VGS = 4.5 V
0
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
2SK3565
6 COMMON SOURCE
5 Tc = 25°C PULSE TEST
4
ID – VDS
10
8
6
5.5 5.25
3 5
2 4.75
1
VGS = 4 .5V
0
0
10
20
DRAIN-SOURCE VOLTAGE VDS
30
(V)
DRAIN CURRENT ID (A)
ID – VGS
10 COMMON SOURCE
8 VDS = 20 V PULSE TEST
6
4
Tc = −55°C
2
100
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS
10
(V)
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
20
COMMON SOURCE
Tc = 25℃
14
PULSE T.