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K3565 Dataheets PDF



Part Number K3565
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK3565
Datasheet K3565 DatasheetK3565 Datasheet (PDF)

2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sour.

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2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 900 V 900 V ±30 V 5 A 15 45 W 595 mJ 5 A 4.5 mJ 150 °C -55~150 °C 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch-c) Rth (ch-a) 2.78 °C/W 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. 1 Note 2: VDD = 90 V, Tch = 25°C(Initial), L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 Start of commercial production 2002-06 1 2013-11-01 2SK3565 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG =±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V RDS (ON) VGS = 10 V, ID = 3 A ⎯ 2.0 2.5 Ω ⎪Yfs⎪ VDS = 20 V, ID = 3 A 2.0 4.5 ⎯ S Ciss ⎯ 1150 ⎯ Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 20 ⎯ pF Coss ⎯ 100 ⎯ tr 10 V VGS ID = 3 A VOUT ⎯ 30 ⎯ 0V ton 50 Ω RL = ⎯ 70 ⎯ 66.7 Ω ns tf ⎯ 60 ⎯ VDD ∼− 200 V toff Duty ≤ 1%, tw = 10 μs ⎯ 170 ⎯ Qg Qgs VDD ∼− 400 V, VGS = 10 V, ID = 5 A Qgd ⎯ 28 ⎯ ⎯ 17 ⎯ nC ⎯ 11 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min Typ. Max Unit ⎯ ⎯ 5 A ⎯ ⎯ 15 A ⎯ ⎯ −1.7 V ⎯ 900 ⎯ ns ⎯ 5.4 ⎯ μC Marking K3565 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of Note 4 certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 DRAIN CURRENT ID (A) 5 COMMON SOURCE Tc = 25°C 4 PULSE TEST ID – VDS 8 6 10 5.5 5.25 3 5 2 4.75 1 VGS = 4.5 V 0 0 4 8 12 16 20 24 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 2SK3565 6 COMMON SOURCE 5 Tc = 25°C PULSE TEST 4 ID – VDS 10 8 6 5.5 5.25 3 5 2 4.75 1 VGS = 4 .5V 0 0 10 20 DRAIN-SOURCE VOLTAGE VDS 30 (V) DRAIN CURRENT ID (A) ID – VGS 10 COMMON SOURCE 8 VDS = 20 V PULSE TEST 6 4 Tc = −55°C 2 100 25 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 (V) DRAIN-SOURCE VOLTAGE VDS (V) VDS – VGS 20 COMMON SOURCE Tc = 25℃ 14 PULSE T.


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