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2SA817A

Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Voltage Amplifie...


Toshiba Semiconductor

2SA817A

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Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications 2SA817A Unit: mm Complementary to 2SC1627A. Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IE PC Tj Tstg −80 −80 −5 −400 400 800 150 −55 to 150 V V V mA mA mW °C °C JEDEC TO-92MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5J1A Weight: 0.36 g (typ.) operating temperature/current/voltage, etc.) are within the a...




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