DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
Complementary to 2SC1623A High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0
mA) High Voltage: VCEO = −50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
−60
V
Collector to Emitter Voltage
VCEO
−50
V
Emitter to Base Vo...
