NTMS5835NL

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance www.DataSheet4U.net Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 9.2 7.4 1.5 1.0 12 9.6 2.6 1.6 48 −55 to +150 20 69 37 260 A °C A mJ A °C 8 1 SO−8 CASE 751 STYLE 12 W A W G Unit V V A 40 V http://onsemi.com RDS(ON) MAX 10 mW @ 10 V 14 mW @ 4.5 V D ID MAX 12 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) S N−CHANNEL MOSFET MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 5835NL AYWWG G 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Top View = Assembly Location = Year = Work Week = Pb−Free Package A Y WW G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above t...