2SA733

DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% −60 V −50 V −5.0 V −100 mA −20 mA ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage Collector Saturation Voltage SYMBOL hFE fT Cob ICBO IEBO VBE VCE(sat) TEST CONDITIONS VCE = −6.0 V, IC...