2SA673AK

2SA673A(K) Silicon PNP Epitaxial Application Low frequency amplifier Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA673A(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –50 –50 –4 –0.5 0.4 150 –55 to +150 Unit V V V A W °C °C 2 2SA673A(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –50 –50 –4 — — — — — 60 10 — — — — Typ — — — — — –0.64 –0.2 –0.87 — — 120 0.3 0.6 0.4 Max — — — –0.5 –0.5 — –0.6 — 320 — — — — — MHz µs µs µs Unit V V V µA µA V V V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VEB = –3 V, IC = 0 VEB = –3 V, IC = –10 mA I C = –150 mA, IB = –15 mA*2 I C = –150 mA, IB = –15 mA*2 VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA*2 VCE = –3 V, IC = –10 mA VCC = –10.3 V I C = 10 IB1 = –10 IB2 = –10 mA VCC = –5 V, I C = IB1 = IB2 = –20 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage DC current transfer ratio V(BR)EBO I CBO I EBO VBE VCE(sat) VBE(sat) hFE*1 hFE Gain bandwidth product Turn on time Turn off time Storage time fT t on t off ...