PZT159

PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free www.DataSheet4U.net COLLECTOR 2, 4 BASE 1 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Collector Current Total Device Disspation TA=25°C Junction Temperature Storage, Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -100 -60 -6 -5 -15 3 +150 -55 to +150 Unit V V V A A W ˚C ˚C *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). Device Marking PZT159 =159 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cut-O Current VCB=-80V, IE=0 Collector Cut-O Current VCES =-60V Emitter-Cut-O Current VEB=-6V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO Min -100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON http://www.weitron.com.tw 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Base-Emitter Saturation Voltage IC=-5A, IB=-500mA Base-Emitter On Voltage ...