2SA608N

Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Package Dimensions unit:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA Ratings (–50)60 (–)50 (–)6 (–)150 (–)400 500 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA 160* 70 Conditions Ratings min typ max (–)0.1 (–)0.1 560* Unit µA µA Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow Rank hFE F 160 to 320 G 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems...