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ARF301 Dataheets PDF



Part Number ARF301
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE
Datasheet ARF301 DatasheetARF301 Datasheet (PDF)

ARF301 125V, 300W, 45MHz P-CHANNEL ENHANCEMENT MODE www.DataSheet4U.net RF POWER MOSFET The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF power transistor making the pair well suited for bridge configurations • Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15dB.

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ARF301 125V, 300W, 45MHz P-CHANNEL ENHANCEMENT MODE www.DataSheet4U.net RF POWER MOSFET The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF power transistor making the pair well suited for bridge configurations • Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15dB (Class E) Efficiency = 80% • RoHS Compliant • High Performance • High Voltage Breakdown and Large SOA for Superior Ruggedness • Low Thermal Resistance. • Capacitance matched with ARF300 N-Channel Maximum Ratings Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC =25°C unless otherwise specified Ratings 500 500 20 ±30 833 -55 to 175 300 Unit V A V W °C Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 10A) Gate Threshold Voltage (VDS = VGS, ID = 10mA) 5 -2.5 8 - 4 -5 Min 500 8 10 25 250 ±100 Typ Max Unit V μA nA mhos Volts Thermal Characteristics Symbol RθJC RθJHS Parameter Junction to Case Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Min Typ Max 0.15 0.27 Unit °C/W 050-4949 Rev A 6-2008 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 2000 320 62 Max 2200 360 70 ARF301 Unit pF Functional Characteristics Symbol GPS η Ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27MHz Idq = 0mA VDD = 125V POUT = 300W Min 15 80 Typ 17 85 No Damage Max Unit dB % 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Dynamic Characteristics 1.0E−8 36 Ciss 1.0E−9 ID, DRAIN CURRENT (AMPERES) 32 28 24 20 16 12 8 4 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C CAPACITANCE Coss 1.0E−10 TJ = +25°C Crss TJ = +125°C 0 2 4 6 8 10 12 1.0E−11 0 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 100 ID, DRAIN CURRENT (AMPERES) OPERATION HERE (ON) LIMITED BY R DS ID Max O 10 n Rd s TC =+25°C TJ =+175°C SINGLE PULSE 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 1 050-4949 Rev A 6-2008 BVdss Line PD Lin e Dynamic Characteristics 5 ID, DRAIN CURRENT (AMPERES) 25 10 and 15V 8.0V ARF301 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 20 7.5V 4 15 7V 6.5V 6V 10 3 5 5.5V 0 0 5 10 15 20 25 30 2 -50 0 50 100 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 SINGLE PULSE 0 10-1 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 -4 -3 10 TJ (˚C) 0.048 Dissipated Power (Watts) TC (˚C) 0.037 0.094 0.064 0.490 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.0160 Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.56 27.12 40.68 Zin (Ω) 18 - j 10.6 2.7 - j 4.5 1.9 - j 1.6 1.77 - j 0.18 12.3 - j 10.2 050-4949 Rev A 6-2008 ZIN - Gate shunted with 25Ω Idq = 0 ZOL - Conjugate of optimum load for 300 Watts output at Vdd=125V ZEXT ZOL (Ω) 20.9 - j 1.3 17.8 - j 7.4 8.0 - j 10 ARF301 T11 Package Outline 1.141 0.04 0.16 0.009 0.963 0.135 0.890 0.237 R0.125 0.507 0.257 0.980 D 0.125 R0.050 050-4949 Rev A 6-2008 0.100 x 4 0.140 x 6 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8.


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