APT106N60B2C6

APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance www.DataSheet4U.net Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel) Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 All Ratings per die: TC = 25°C unless otherwise specified. APT106N60B2C6 600 106 68 318 ±20 833 -55 - to 150 260 18.6 3 UNIT Volts Continuous Drain Current @ TC = 100°C Pulsed Drain Current 2 Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 Volts Watts °C Amps Repetitive Avalanche Energy ( Id = 18.6A, Vdd = 50V ) ( Id = 18.6A, Vdd = 50V ) 3.4 2200 mJ Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 53A) 0.035 50 500 ±200 2.5 3 3.5 Ohms μA nA Volts 6-2010 050-7208 Rev A Zero Gate Vo...