2SA2093
Transistors
Power transistor (−60V, −2A)
2SA2093
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −...
2SA2093
Transistors
Power
transistor (−60V, −2A)
2SA2093
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !External dimensions (Unit : mm)
ATV
6.8 2.5
0.65Max.
1.0
0.5 2.54 2.54
0.9
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
1.05
14.5
4.4
0.45
Taping specifications
Abbreviated symbol : A2093
!Applications Small signal low frequency amplifier High speed switching
!Structure
PNP Silicon epitaxial planar
transistor
!Packaging specifications
Package
Type
Taping
TV2 2500
Code Basic ordering unit (pieces)
2SA2093
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits −60 −60 −6 −2.0 −4.0 1.0 150 −55 to 150 Unit V V V A A W °C °C
∗
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗Pw=10ms
Pulsed
Tj
Tstg
1/3
2SA2093
Transistors
!Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V µA µA Condition IC= −1mA IC= −100µA IE= −100µA VCB= −40V VEB= −4V IC= −1.0A IB= −100mA VCE= −2V IC= −100mA VCE= −...
