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CZD5103 Dataheets PDF



Part Number CZD5103
Manufacturers SeCoS
Logo SeCoS
Description NPN Epitaxial Planar Silicon Transistor
Datasheet CZD5103 DatasheetCZD5103 Datasheet (PDF)

CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor DESCRIPTION The CZD5103 is designed for high speed switching applications. www.DataSheet4U.net D-Pack (TO-252) FEATURES     Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952 K M J HF N O P GE A B C D MARKING 5103  1 Collector  REF. Date Code  Base  Emitter A B C D E F G H Millimeter Min. Max. 6.

  CZD5103   CZD5103



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CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor DESCRIPTION The CZD5103 is designed for high speed switching applications. www.DataSheet4U.net D-Pack (TO-252) FEATURES     Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952 K M J HF N O P GE A B C D MARKING 5103  1 Collector  REF. Date Code  Base  Emitter A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 SWITCHING TIME TEST CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ TSTG Ratings 100 60 5 6 20 1 10 150 -55 ~ 150 Unit V V V A A W W ℃ ℃ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Apr-2010 Rev. A Page 1 of 4 CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 Transition frequency Output Capacitance Turn-On Time Storage Time Fall Time fT COB TON TSTG Tf 100 60 5 120 40 0.15 210 80 0.1 10 10 0.3 0.5 1.2 1.5 270 0.3 1.5 0.3 S MHz pF V V V A A V V V V Test Conditions IC=50 A, IE=0 IC=1mA, IB=0 IE=50 A, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.15A IC=4A, IB=0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCE=2V, IC=1A VCE=2V, IC=3A VCB=10V, IE=-0.5A, f=30MHz VCE=10V, IE=0, f=1MHz Base-emitter saturation voltage *DC current gain IC=3A, RL=10Ω, IB1=-IB2=0.15A, VCC=30V *Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Apr-2010 Rev. A Page 2 of 4 CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Apr-2010 Rev. A Page 3 of 4 CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Apr-2010 Rev. A Page 4 of 4 .


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