Document
CZD5103
Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor
DESCRIPTION
The CZD5103 is designed for high speed switching applications.
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D-Pack (TO-252)
FEATURES
Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952
K M J HF N O P GE A B C D
MARKING
5103
1
Collector
REF.
Date Code
Base
Emitter
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
SWITCHING TIME TEST CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC IC PD PD TJ TSTG
Ratings
100 60 5 6 20 1 10 150 -55 ~ 150
Unit
V V V A A W W ℃ ℃
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A
Page 1 of 4
CZD5103
Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 Transition frequency Output Capacitance Turn-On Time Storage Time Fall Time fT COB TON TSTG Tf 100 60 5 120 40 0.15 210 80 0.1 10 10 0.3 0.5 1.2 1.5 270 0.3 1.5 0.3 S
MHz pF V V V A A V V V V
Test Conditions
IC=50 A, IE=0 IC=1mA, IB=0 IE=50 A, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.15A IC=4A, IB=0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCE=2V, IC=1A VCE=2V, IC=3A VCB=10V, IE=-0.5A, f=30MHz VCE=10V, IE=0, f=1MHz
Base-emitter saturation voltage
*DC current gain
IC=3A, RL=10Ω, IB1=-IB2=0.15A, VCC=30V
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A
Page 2 of 4
CZD5103
Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A
Page 3 of 4
CZD5103
Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A
Page 4 of 4
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