CZD2983

CZD2983 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. www.DataSheet4U.net D-Pack (TO-252) FEATURES   High transition frequency：fT = 100MHz (Typ.) Complements to CZD1225 A B C D GE K HF MARKING 2983  1 2 3 Collector  M J N O P Date Code  Base  Emitter REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Ratings 160 160 5 1.5 0.3 1 15 150 -55 ~ 150 Unit V V V A A W W ℃ ℃ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Sep-2010 Rev. A Page 1 of 3 CZD2983 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation...