CZD1225

CZD1225 Elektronische Bauelemente PNP Epitaxial Planar Silicon Transistor DESCRIPTION The CZD1225 is designed for power amplifier and driver stage amplifier applications. www.DataSheet4U.net D-Pack (TO-252) FEATURES   High transition frequency：fT = 100MHz (typ.) Complements to CZD2983 A B C D GE K M J HF N O P MARKING 1225  1 Collector  REF. Date Code  Base  Emitter A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Ratings -160 -160 -5 -1.5 -0.3 1 15 150 -55 ~ 150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage *DC current gain Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO *VCE(sat) *VBE(on) *hFE fT COB Min. -160 -160 -5 70 - Typ. 100 30 Max. -1 -1 -1.5 -1.0 240 - Unit V V V A A V V MHz pF ...