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BD13003B Dataheets PDF



Part Number BD13003B
Manufacturers SeCoS
Logo SeCoS
Description NPN Plastic Encapsulated Transistor
Datasheet BD13003B DatasheetBD13003B Datasheet (PDF)

Elektronische Bauelemente BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Switching Applications TO-126 CLASSIFICATION OF tS Product-Rank Range BD13003B-A1 2-2.5 (µs) BD13003B-A2 2.5-3 (µs) 1Emitter 2Collector 3Base MARKING ․13003 ․=Solid dot *Solid dot=Green molding compound device, if none, the normal device. A E F N L M K B H C D ORDER INFORMATION Part Number Type Collector 2 G J .

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Elektronische Bauelemente BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Switching Applications TO-126 CLASSIFICATION OF tS Product-Rank Range BD13003B-A1 2-2.5 (µs) BD13003B-A2 2.5-3 (µs) 1Emitter 2Collector 3Base MARKING ․13003 ․=Solid dot *Solid dot=Green molding compound device, if none, the normal device. A E F N L M K B H C D ORDER INFORMATION Part Number Type Collector 2 G J BD13003BBD13003B- -C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base * =Rank 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 Parameter Symbol Ratings Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction and Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 1.5 1.5 150, -55~150 V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 700 400 - - Emitter-Base Breakdown Voltage V(BR)EBO 9 - - Collector Cut-off Current ICBO ICEO - -1 - 0.5 Emitter Cut-off Current DC Current Gain IEBO - - 1 20 - 30 hFE 5- - Collector-Emitter Saturation Voltage VCE(sat) - - 0.6 Base-Emitter Saturation Voltage Transition Frequency VBE(sat) fT - - 1.2 5- Fall time Storage time http://www.SeCoSGmbH.com/ 14-Aug-2018 Rev. C tF - 0.5 tS 2 - 3 Unit Test Conditions V IC=5mA, IE=0 V IC=10mA, IB=0 V IE=2mA, IC=0 VCB=700V, IE=0 mA VCE=400V, IB=0 mA VEB=9V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=1.5A V IC=1A, IB=0.25A V IC=1A, IB=0.25A MHz VCE=10V, IC=100mA, f=1MHz µS IC=1A, IB1= -IB2=0.2A, VCC=100V µS IC=250mA (UI9600) Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente TYPICAL CHARACTERISTIC BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor http://www.SeCoSGmbH.com/ 14-Aug-2018 Rev. C Any changes of specification will not be informed individually. Page 2 of 2 .


BCPA94 BD13003B BL817


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