Elektronische Bauelemente
BCP669A
1.5A, 180V NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” s...
Elektronische Bauelemente
BCP669A
1.5A, 180V
NPN Epitaxial Planar
Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Low Frequency Power Amplifier Designed for General High Breakdown Voltage High Power Dissipation Amplifier and Switching Applications
PACKAGE INFORMATION
Package
MPQ
Leader Size
B
SOT-89
1K
7 inch
F
ORDER INFORMATION
Collector
2
Part Number
Type
BCP669A BCP669A-C
Lead (Pb)-free Lead (Pb)-free and Halogen-free
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
REF.
A B C D E F
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
180
Collector-Emitter Voltage
VCEO
160
Emitter-Base Voltage
VEBO
5
Collector Current Total Power Dissipation 1 Total Power Dissipation 2
IC PD
1.5 0.6 1
Junction, Storage Temperature
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2
TJ, TSTG Thermal Data
RθJA
150, -55~150
208 125
Thermal Resistance Junction-Case
RθJC
Notes:
1. When mounted on Min. copper pad.
2. When mounted on FR-4 PCB with area measuring 15×15×1 mm.
40
SOT-89
123 A EC
4
D
G
H
J
Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60
1.55 TYP. 0.89 1.20
K
L
REF.
G H J K L
Millimeter Min. Max. 0.40 0.58
1.50 TYP 3.00 TYP 0.32 0.52
0.35 0.44
Unit V V V A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter B...