Document
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2
PTFA192401F Package H-37260-2
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 48 50 35 30 25
Features
• • •
Drain Efficiency (%)
Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16 dB - Efficiency = 27.5% - Intermodulation distortion = –35 dBc - Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 16 dB - Efficiency = 33% - Adjacent channel power = –33 dBc Typical CW performance, 1960 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 54% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Low
20 15 10
•
ACPR Up
5 0
Average Output Power (dBm)
•
• • •
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11
*See Infineon distributor for future availability.
Rev. 02, 2009-04-01
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
15 25 —
Typ
16 27 –36
Max
— — –34
Unit
dB % dBc
ηD
IMD
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
— — —
Typ
15.8 40 –28
Max
— — —
Unit
dB % dBc
ηD
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.6 A VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 — — — 2.0 —
Typ
— — — 0.03 2.5 —
Max
— 1.0 10.0 — 3.0 1.0
Unit
V µA µA Ω V µA
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 50 W WCDMA) Data Sheet 2 of 11 TSTG RθJC
Symbol
VDSS VGS TJ PD
Value
65 –0.5 to +12 200 761 4.35 –40 to +150 0.23
Unit
V V °C W W/°C °C °C/W Rev. 02, 2009-04-01
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA192401E PTFA192401F V4 V4
Package Type
H-36260-2 H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTFA192401E PTFA192401F
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
Intermodulation Distortion Products v. Output Power
VDD = 30 V, IDQ = 1600 mA, ƒ 1 = 1957.5 MHz, ƒ2 = 1962.5 MHz
-20
40
-5
Intermodulation Distortion (dBc)
Gain (dB), Efficiency (%)
-30
IM3
-40
30 25 20 15 10 1860
-15 -20 -25 -30 -35 2040
IM5
Efficiency
-50
-60 10
IM7
100 1000
Gain
1890 1920 1950 1980 2010
Output Power, PEP (W)
Frequency (MHz)
*See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 02, 2009-04-01
Input Return Loss (dB)
Up Low
35
Input Return Loss
-10
PTFA192401E PTFA192401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz
Intermodulation Distortion Products vs. Tone Spacing
VDD = 30 V IDQ = 1800 mA , ƒ = 1960 MHz, POUT = 53 dBm PEP
65
-20
17 16
Intermodulation Distortion (dBc)
Drain Efficiency (%)
Gain
55 45 35
-25 -30 -35 -40 -45 -50 -55 0 5 10 15 20 25 30 35 40
Gain (dB)
15 14 13
3rd Order
5th
TCASE = 25°C Efficiency TCA.