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PTFA192401F Dataheets PDF



Part Number PTFA192401F
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet PTFA192401F DatasheetPTFA192401F Datasheet (PDF)

PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide exc.

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PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 48 50 35 30 25 Features • • • Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16 dB - Efficiency = 27.5% - Intermodulation distortion = –35 dBc - Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 16 dB - Efficiency = 33% - Adjacent channel power = –33 dBc Typical CW performance, 1960 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 54% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power Adjacent Channel Power Ratio (dB) Efficiency ACPR Low 20 15 10 • ACPR Up 5 0 Average Output Power (dBm) • • • • All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 *See Infineon distributor for future availability. Rev. 02, 2009-04-01 PTFA192401E PTFA192401F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 15 25 — Typ 16 27 –36 Max — — –34 Unit dB % dBc ηD IMD Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min — — — Typ 15.8 40 –28 Max — — — Unit dB % dBc ηD IMD DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.6 A VGS = 10 V, V DS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 — — — 2.0 — Typ — — — 0.03 2.5 — Max — 1.0 10.0 — 3.0 1.0 Unit V µA µA Ω V µA Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 50 W WCDMA) Data Sheet 2 of 11 TSTG RθJC Symbol VDSS VGS TJ PD Value 65 –0.5 to +12 200 761 4.35 –40 to +150 0.23 Unit V V °C W W/°C °C °C/W Rev. 02, 2009-04-01 PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Ordering Information Type and Version PTFA192401E PTFA192401F V4 V4 Package Type H-36260-2 H-37260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA192401E PTFA192401F Typical Performance (data taken in a production test fixture) Broadband Performance VDD = 30 V, IDQ = 1600 mA, POUT = 50 W Intermodulation Distortion Products v. Output Power VDD = 30 V, IDQ = 1600 mA, ƒ 1 = 1957.5 MHz, ƒ2 = 1962.5 MHz -20 40 -5 Intermodulation Distortion (dBc) Gain (dB), Efficiency (%) -30 IM3 -40 30 25 20 15 10 1860 -15 -20 -25 -30 -35 2040 IM5 Efficiency -50 -60 10 IM7 100 1000 Gain 1890 1920 1950 1980 2010 Output Power, PEP (W) Frequency (MHz) *See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 02, 2009-04-01 Input Return Loss (dB) Up Low 35 Input Return Loss -10 PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz Intermodulation Distortion Products vs. Tone Spacing VDD = 30 V IDQ = 1800 mA , ƒ = 1960 MHz, POUT = 53 dBm PEP 65 -20 17 16 Intermodulation Distortion (dBc) Drain Efficiency (%) Gain 55 45 35 -25 -30 -35 -40 -45 -50 -55 0 5 10 15 20 25 30 35 40 Gain (dB) 15 14 13 3rd Order 5th TCASE = 25°C Efficiency TCA.


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