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PTFA190451F

Infineon Technologies
Part Number PTFA190451F
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jul 11, 2011
Detailed Description PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1...
Datasheet PDF File PTFA190451F PDF File

PTFA190451F
PTFA190451F

Overview
PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.
DataSheet4U.
net Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.
These devices are available in thermally-enhanced packages with eared or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA190451E Package H-36265-2 PTFA190451F Package H-37265-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, ƒ = 1...


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