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PTFA182001E

Part Number	PTFA182001E
Manufacturer	Infineon Technologies
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jul 11, 2011
Detailed Description	PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 M...
Datasheet	PTFA182001E PDF File

Overview

PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz net Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz.
Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features • • • Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced package ...

Similar Datasheet

PTFA182001E Thermally-Enhanced High Power RF LDMOS FET - Infineon Technologies

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