Thermally-Enhanced High Power RF LDMOS FET
PTFA142401EL PTFA142401FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 240 W,...
Description
PTFA142401EL PTFA142401FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 ā 1500 MHz
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Description
The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2
DVB-T Drive-up
VDD = 30 V, IDQ = 2000 mA, Ę = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW Adjacent Channel Power Ratio (dB)
-25 40
Features
Drain Efficiency (%)
Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.25 micron Au plating Broadband internal matching Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16.0 dB - Efficiency = 27.5% - Adjacent channel power = ā32 dBc Typical CW performance, 1475 MHz, 30 V - Output power at Pā1dB = 240 W - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power
Efficiency
-30 30
-35
20
-40
ACPR Hi
ACPR Low
10
-45 42 43 44 45 46 47 48 49
0
Average Output Power (dBm)
RF ...
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