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MRF8HP21130HSR3

Part Number	MRF8HP21130HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 7, 2011
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors ...
Datasheet	MRF8HP21130HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.
0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.
4 Vdc, Pout = 28 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.
2 14.
1 14.
0 ηD (%) 46.
4 45.
7 45.
1 Output PAR (dB) 7.
9 7.
7 7.
6 AC...

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MRF8HP21130HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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