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MRF8HP21130HR3 Dataheets PDF



Part Number MRF8HP21130HR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF8HP21130HR3 DatasheetMRF8HP21130HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping.

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Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) www.DataSheet4U.net • Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW (1) Features • Advanced High Performance In--Package Doherty • Production Tested in a Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 8. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 8. CASE 465M-01, STYLE 1 NI-780-4 MRF8HP21130HR3 CASE 465H-02, STYLE 1 NI-780S-4 MRF8HP21130HSR3 Peaking RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 Carrier (Top View) 2 RFoutB/VDSB Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C VDSS VGS VDD Tstg TC TJ CW Figure 1. Pin Connections Symbol Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 118 0.28 Unit Vdc Vdc Vdc °C °C °C W W/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8HP21130HR3 MRF8HP21130HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 28 W CW, 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2170 MHz Case Temperature 105°C, 110 W CW(3), 28 Vdc, IDQB = 360 mA, VG.


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