IDH15S120
thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching beh...
IDH15S120
thinQ!TM SiC
Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Optimized for high temperature operation
www.DataSheet4U.net Lowest Figure
Product Summary VDC QC IF; TC< 130 °C 1200 600 3.2 54 15 3 V nC A
PG-TO220-2
of Merit QC/IF
thinQ!TM Diode designed for fast switching applications like: SMPS e.g.; CCM PFC Motor Drives; Solar Applications; UPS
Type IDH15S120
Package PG-TO220-2
Marking D15S120
Pin 1 C
Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws T j=25 °C VR= 0….960 V T C=25 °C Value 15 78 66 300 30 20 1200 50 185 -55 ... 175 260 60 Mcm V V/ns W °C A2s Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt
Rev. 2.0
page 1
2010-04-20
IDH15S120
Parameter Symbol Conditions min....