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3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
IDH10SG60C
600 V 16 nC 10 A
thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS
Type IDH10SG60C
Package PG-TO220-2
Marking D10G60C
Pin 1 C
Pin 2 A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM sine halfwave
T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms
Non-repetitive peak forward current i ²t v.