IDH06S60C

IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications www.DataSheet4U.net Product Summary V DC Qc IF 600 15 6 V nC A Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type IDH06S60C Package PG-TO220-2 Marking D06S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 6 9 49 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 28 210 12 600 A2s V V/ns W °C Mcm °C 2009-06-02 V R = 0….480V T C=25 °C 50 63 -55 ... 175 M3 and M3.5 screws 1.6mm (0.063 in.) from case for 10s page 1 60 260 IDH06S60C Parameter Symbol ...