IDD04S60C

IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC for target applications www.DataSheet4U.net 1) Product Summary V DC Qc IF 600 8 4 V nC A PG-TO252 3 Breakdown voltage tested at 5mA2) 1 2 thinQ! 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type IDD04S60C Package PG-TO252 Marking D04S60C Pin 1 n.c. Pin 2 A Pin 3 C Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<130 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 18 132 5.1 600 A2s V V/ns W °C V R = 0….480V T C=25 °C 50 37 -55 ... 175 Rev. 2.0 page 1 2006-04-03 IDD04S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJA...