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IDC04S60CE

Infineon Technologies
Part Number IDC04S60CE
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide • S...
Datasheet PDF File IDC04S60CE PDF File

IDC04S60CE
IDC04S60CE

Overview
IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery net • High surge current capability • Applications: • SMPS, PFC, snubber C A Chip Type IDC04S60CE VBR 600V IF 4A Die Size 1.
146 x 0.
968 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.
146x 0.
968 0.
909 x 0.
731 1.
11 355 100 619...


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