IDB10S60C

IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: CCM PFC Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 76 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Rev. 2.1 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 32 350 29 600 A2s V V/ns W °C 2009-01-07 VR=0…480V T C=25 °C 50 83 -55 ... 175 page 1 IDB10S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient SMD version, device on PCB, min...