Document
IDP09E120 IDB09E120 Fast Switching EmCon Diode
Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
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Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 9 1.65 150
P-TO220-2-2.
V A V °C
• Easy paralleling
Type IDP09E120 IDB09E120
Package P-TO220-2-2.
Ordering Code Q67040-S4479
Marking D09E120 D09E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4384
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25°C TC=90°C
Symbol VRRM IF
Value 1200 23 14.4
Unit V A
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
50 36 W 69 33
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C TC=90°C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
°C °C
Rev.2
Page 1
2003-07-31
IDP09E120 IDB09E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 1.8 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25°C V R=1200V, T j=150°C
Symbol min. IR VF -
Values typ. max.
Unit
µA 1.65 1.7 100 700 V 2.15 -
Forward voltage drop
IF=9A, Tj=25°C IF=9A, Tj=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP09E120 IDB09E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 140 200 210 13.3 16.1 16.5 950 1470 1600 5.4 6.5 6.6 A nC -
Peak reverse current
V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C
Reverse recovery charge
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C
Reverse recovery softness factor
V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C
Rev.2
Page 3
2003-07-31
IDP09E120 IDB09E120
1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 150 °C
70
2 Diode forward current IF = f(TC) parameter: Tj≤ 150°C
25
W A
50
P tot
IF
40 30 20 10 0 25 50 75 100 150
15
10
5
°C TC
0 25
50
75
100
°C TC
150
3 Typ. diode forward current IF = f (VF)
27
4 Typ. diode forward voltage VF .