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IDP09E120 Dataheets PDF



Part Number IDP09E120
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Fast Switching EmCon Diode
Datasheet IDP09E120 DatasheetIDP09E120 Datasheet (PDF)

IDP09E120 IDB09E120 Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 9 1.65 150 P-TO220-2-2. V A V °C • Easy paralleling Type IDP09E120 IDB09E120 Package P-TO220-2-2. Ordering Code Q67040-S4479 Marking D09E120 D09E120 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4384 Maximum Ratings, at Tj = 25 °C, unless othe.

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IDP09E120 IDB09E120 Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 9 1.65 150 P-TO220-2-2. V A V °C • Easy paralleling Type IDP09E120 IDB09E120 Package P-TO220-2-2. Ordering Code Q67040-S4479 Marking D09E120 D09E120 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4384 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 1200 23 14.4 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 50 36 W 69 33 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+150 260 °C °C Rev.2 Page 1 2003-07-31 IDP09E120 IDB09E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 1.8 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=1200V, T j=25°C V R=1200V, T j=150°C Symbol min. IR VF - Values typ. max. Unit µA 1.65 1.7 100 700 V 2.15 - Forward voltage drop IF=9A, Tj=25°C IF=9A, Tj=150°C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP09E120 IDB09E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 140 200 210 13.3 16.1 16.5 950 1470 1600 5.4 6.5 6.6 A nC - Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C Reverse recovery softness factor V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C Rev.2 Page 3 2003-07-31 IDP09E120 IDB09E120 1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 150 °C 70 2 Diode forward current IF = f(TC) parameter: Tj≤ 150°C 25 W A 50 P tot IF 40 30 20 10 0 25 50 75 100 150 15 10 5 °C TC 0 25 50 75 100 °C TC 150 3 Typ. diode forward current IF = f (VF) 27 4 Typ. diode forward voltage VF .


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