2SB976

Transistors 2SB0976 (2SB976) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.75 150 −55 to +150 Unit V V 1 2 3 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 0.45+0.15 –0.1 2.3±0.2 V A A W °C °C 5.1±0.2 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob Conditions IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −10 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = −2 A IC = −3 A, IB = − 0.1 A VCB = −6 V, IE = 50 mA, f = 200 MHz VCB = −20 V, IE = 0, f = 1 MHz 125 − 0.4 120 60 Min −18 −7 −100 −1 625 −1.0 Typ Ma...