2SB0953A

Power Transistors 2SB0953 (2SB953), 2SB0953A (2SB953A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 0.7±0.1 ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0953 2SB0953A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −40 −50 −20 −40 −5 −7 −12 30 2 150 −55 to +150 °C °C V A A W V Unit V 16.7±0.3 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 Collector-emitter voltage 2SB0953 (Base open) 2SB0953A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0953 2SB0953A 2SB0953 2SB0953A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT Cob ton tstg tf ICBO VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, ...