2SB0952

Power Transistors 2SB0952 (2SB952), 2SB0952A (2SB952A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching Unit: mm ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0952 2SB0952A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −40 −50 −20 −40 −5 −7 −12 30 1.3 150 −55 to +150 Unit V 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0952 (Base open) 2SB0952A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V (6.5) V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0952 2SB0952A 2SB0952 2SB0952A IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time * Symbol VCEO ICBO Conditions IC = −10 mA, IB = 0 VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2...