Document
Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type darlington
4.2±0.2
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
■ Features
φ 3.1±0.1
Solder Dip (4.0)
14.0±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = −4 V, IC = −2 A VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VCE = −30 V, IB = 0 VCE = −40 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −2 A IC = −2 A, IB = −8 mA VCE = −10 V, IC = − 0.5 A, f = 1 MHz IC = −2 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.4 1.5 0.5 1 000 1 000 Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 Typ
E Max Unit V −2.8 −1 −1 −2 −2 −2 10 000 −2.5 V MHz µs µs µs mA mA
V mA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P
2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00028BED
1
2SB0949, 2SB0949A
PC Ta
50
IC VCE
−5
−10
TC=25˚C
IC VBE
VCE=–4V
Collector power dissipation PC (W)
40
Collector current IC (A)
30
−3
Collector current IC (A)
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
−4
IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –0.8mA –0.6mA
−8
−6
25˚C
20
(1)
−2
4.0mA
−4
TC=100˚C
–25˚C
10 (3) (4) 0 0 40
(2)
−1
–0.2mA –0.1mA
−2
80
120
160
0
0
−1
−2
−3
−4
−5
0
0
− 0.8
−1.6
−2.4
−3.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−100
IC/IB=250
hFE IC
VCE=–4V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25˚C
105
Forward current transfer ratio hFE
−10
104
TC=100˚C
25˚C
103
–25˚C
−1
TC=100˚C –25˚C 25˚C
103
102
− 0.1
102
10
− 0.01 − 0.01
− 0.1
−1
−10
10 − 0.01
− 0.1
−1
−10
1 − 0.1
−1
−10
−100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
−100
Non repetitive pulse TC=25˚C
Rth t
103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1)
Thermal resistance Rth (°C/W)
Collector current IC (A)
−10
ICP t=1ms IC DC
102
10
(2)
−1
t=10ms
1
− 0.1
2SB0949A 2SB0949
10−1
− 0.01 −1
−10
−100
−1 000
10−2 10−4
10−3
10−2
10−1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00028BED
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:.