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2SB0948 Dataheets PDF



Part Number 2SB0948
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB0948 Datasheet2SB0948 Datasheet (PDF)

Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 2SB0948 2SB0948A VCEO VEBO IC ICP PC.

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Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 2SB0948 2SB0948A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature VCBO −40 −50 −20 −40 −5 −10 −20 40 2 150 −55 to +150 °C °C V A A W 1 2 3 V Solder Dip (4.0) Parameter Symbol Rating Unit 14.0±0.5 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 Collector-emitter voltage 2SB0948 (Base open) 2SB0948A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) 2SB0948 2SB0948A ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT Cob ton tstg tf VCB = −40 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −3 A IC = −10 A, IB = − 0.33 A IC = −10 A, IB = − 0.33 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz VCB = −10 V, IE = 0, f = 1 MHz IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A VCC = −20 V 100 400 0.1 0.5 0.1 45 60 260 − 0.6 −1.5 V V MHz pF µs µs µs Symbol VCEO Conditions IC = −10 mA, IB = 0 Min −20 −40 −50 −50 µA µA  Typ Max Unit V Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00027BED 1 2SB0948, 2SB0948A PC  Ta 50 −12 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) IB=–100mA –80mA –60mA –50mA –40mA IC  VCE Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C VCE(sat)  IC −10 IC/IB=30 Collector power dissipation PC (W) 40 −10 Collector current IC (A) −8 –35mA –30mA –25mA −1 TC=100˚C 25˚C –25˚C 30 (1) 20 −6 −4 –20mA –15mA − 0.1 10 (3) (4) 0 (2) −2 –10mA –5mA 0 0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC −10 IC/IB=30 hFE  IC 104 VCE=–2V fT  I C 104 VCE=–10V f=10MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 103 TC=100˚C 25˚C Transition frequency fT (MHz) −10 −100 103 −1 TC=–25˚C 100˚C 25˚C 102 –25˚C 102 − 0.1 10 10 − 0.01 − 0.1 −1 −10 1 − 0.1 −1 1 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob  VCB Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25˚C ton, tstg, tf  IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C Safe operation area −100 ICP Non repetitive pulse TC=25˚C Collector current IC (A) 103 −10 t=1ms IC t=10ms DC 1 tstg 102 −1 ton 0.1 tf 10 − 0.1 2SB0948A 2SB0948 1 − 0.1 −1 −10 −100 0.01 0 −2 −4 −6 −8 − 0.01 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00027BED 2SB0948, 2SB0948A Rth  t 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1) Thermal resistance Rth (°C/W) 102 10 (2) 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00027BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are i.


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