2SB940A

Power Transistors 2SB0940 (2SB940), 2SB0940A (2SB940A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0940 (Base open) 2SB0940A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −200 −150 −180 −6 −2 −3 30 2 150 −55 to +150 °C °C V A A W Unit V V 14.0±0.5 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0940 2SB0940A VEBO VBE ICBO IEBO hFE1 * Symbol VCBO VCEO Conditions IC = −50 µA, IE = 0 IC = −5 mA, IB = 0 IE = −500 µA, IC = 0 VCE = −10 V, IC = −400 mA VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.5 A, f = 10 MHz Min −200 −1...